The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Jun. 14, 2016
Applicant:

Oracle International Corporation, Redwood Shores, CA (US);

Inventors:

Duncan C. Collier, Stockton, CA (US);

Robert P. Masleid, Monte Sereno, CA (US);

Aparna Ramachandran, Cupertino, CA (US);

King Yen, Santa Clara, CA (US);

Assignee:

Oracle International Corporation, Redwood Shores, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/4853 (2013.01); H01L 21/4889 (2013.01); H01L 23/498 (2013.01); H01L 23/49816 (2013.01); H01L 23/5226 (2013.01); H01L 28/40 (2013.01);
Abstract

A multi-layer full dense mesh (MFDM) device. The MFDM may include a metal-top layer including a bump pad array that may include a power(PWR) bump pad within a PWRbump region, a VSS bump pad within a VSS bump region, and a power(PWR) bump pad within a PWRbump region. The metal-top layer may also include a PWRmajority metal-top region. The MFDM may also include a metal-top-layer beneath the metal-top layer and including a VSS majority metal-top-region, a PWRmetal-top-region, and a PWRmetal-top-region. The MFDM may also include a metal-top-layer beneath the metal-top-layer and including a PWRmajority metal-top-region, a VSS metal-top-region, and a PWRmetal-top-region. The MFDM may also include top-VIAs disposed between the metal-top layer and the metal-top-layer, and top-VIAs disposed between the metal-top-layer and the metal-top-layer.


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