The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Sep. 30, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robert L. Bruce, White Plains, NY (US);

Geraud J. Dubois, Los Altos, CA (US);

Gregory Fritz, Wakefield, MA (US);

Teddie P. Magbitang, San Jose, CA (US);

Hiroyuki Miyazoe, San Jose, CA (US);

Willi Volksen, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); C09D 183/04 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); C09D 183/04 (2013.01); H01L 21/02118 (2013.01); H01L 21/02123 (2013.01); H01L 21/02203 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/02318 (2013.01); H01L 21/02348 (2013.01); H01L 21/7682 (2013.01); H01L 21/76828 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 2221/1047 (2013.01); H01L 2224/27416 (2013.01); H01L 2224/85447 (2013.01);
Abstract

An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.


Find Patent Forward Citations

Loading…