The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Feb. 05, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Su-min Kim, Suwon-si, KR;

Hyun-woo Kim, Seongnam-si, KR;

Hyo-jin Yun, Suwon-si, KR;

Kyoung-seon Kim, Suwon-si, KR;

Hai-sub Na, Seoul, KR;

Su-min Park, Seoul, KR;

So-ra Han, Bucheon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/28273 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/02164 (2013.01); H01L 21/02222 (2013.01); H01L 21/02282 (2013.01); H01L 21/02326 (2013.01);
Abstract

A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.


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