The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Jun. 29, 2012
Satoru Sano, Ube, JP;
Yoshihiro Nishimura, Ube, JP;
Takayuki Watanabe, Ube, JP;
Yuuzou Katou, Ube, JP;
Akira Ueki, Ube, JP;
Shinzo Mitomi, Fukuoka, JP;
Masanobu Takasu, Fukuoka, JP;
Yusuke Hara, Fukuoka, JP;
Takaaki Tanaka, Fukuoka, JP;
Satoru Sano, Ube, JP;
Yoshihiro Nishimura, Ube, JP;
Takayuki Watanabe, Ube, JP;
Yuuzou Katou, Ube, JP;
Akira Ueki, Ube, JP;
Shinzo Mitomi, Fukuoka, JP;
Masanobu Takasu, Fukuoka, JP;
Yusuke Hara, Fukuoka, JP;
Takaaki Tanaka, Fukuoka, JP;
UBE MATERIAL INDUSTRIES, LTD., Yamaguchi, JP;
NIPPON TUNGSTEN CO., LTD., Fukuoka, JP;
Abstract
Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.