The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Jan. 14, 2014
Applicant:
Asml Netherlands B.v., Veldhoven, NL;
Inventors:
Alexey Sergeevich Kuznetsov, Zaltbommel, NL;
Arjen Boogaard, Nijmegen, NL;
Jeroen Marcel Huijbregtse, Breda, NL;
Andrey Nikipelov, Eindhoven, NL;
Maarten Van Kampen, Eindhoven, NL;
Assignee:
ASML Netherlands B.V., Veldhoven, NL;
Primary Examiner:
Int. Cl.
CPC ...
G21K 1/06 (2006.01); G03F 7/20 (2006.01); H05G 2/00 (2006.01); B82Y 10/00 (2011.01); C23C 28/00 (2006.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G21K 1/062 (2013.01); B82Y 10/00 (2013.01); C23C 28/34 (2013.01); G03F 7/70033 (2013.01); H05G 2/008 (2013.01); G03F 1/24 (2013.01); G21K 2201/067 (2013.01);
Abstract
A method of manufacturing a multi-layer mirror comprising a multi-layer stack of pairs of alternating layers of a first material and silicon, the method comprising depositing a stack of pairs of alternating layers of the first material and layers of silicon, the stack being supported by a substrate and doping at least a first layer of the first material with a dopant material.