The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jun. 17, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Kiwamu Sakuma, Yokohama, JP;
Masahiro Kiyotoshi, Yokkaichi, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Haruka Kusai, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 45/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/11519 (2017.01); H01L 27/11551 (2017.01); H01L 27/11565 (2017.01); H01L 27/11578 (2017.01); H01L 27/06 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/11519 (2013.01); H01L 27/11551 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/1211 (2013.01); H01L 27/222 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 45/1206 (2013.01); H01L 45/1253 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures.