The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jun. 21, 2016
Iqe, Plc, St. Mellons, Cardiff, GB;
Robert Yanka, Kernersville, NC (US);
Seokjae Chung, Oak Ridge, NC (US);
Kalyan Nunna, High Point, NC (US);
Rodney Pelzel, Emmaus, PA (US);
Howard Williams, Cardiff, GB;
IQE, plc, St. Mellons, Cardiff, GB;
Abstract
Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1×10cmat room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.