The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
May. 16, 2014
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Abstract
Provided is a manufacturing method for a laterally diffused metal oxide semiconductor device, comprising the following steps: growing an oxide layer on a substrate of a wafer (S); coating a photoresist on the surface of the wafer (S); performing photoetching by using a first photoetching mask, and exposing a first implantation window after development (S); performing ion implantation via the first implantation window to form a drift region in the substrate (S); coating one layer of photoresist on the surface of the wafer again after removing the photoresist (S); performing photoetching by using the photoetching mask of the oxide layer of the drift region (S); and etching the oxide layer to form the oxide layer of the drift region (S). Further provided is a laterally diffused metal oxide semiconductor device.