The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Aug. 15, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jack O. Chu, Manhasset Hills, NY (US);

Christos D. Dimitrakopoulos, Baldwin Place, NY (US);

Alfred Grill, White Plains, NY (US);

Timothy J. McArdle, Mahopac, NY (US);

Dirk Pfeiffer, Croton on Hudson, NY (US);

Katherine L. Saenger, Ossining, NY (US);

Robert L. Wisnieff, Ridgefield, CT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/20 (2006.01); H01L 29/775 (2006.01); H01L 21/30 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 21/02 (2013.01); H01L 21/30 (2013.01); H01L 29/66 (2013.01); H01L 51/00 (2013.01);
Abstract

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.


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