The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Mar. 21, 2016
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shin-Cheng Lin, Tainan, TW;
Wen-Hsin Lin, Jhubei, TW;
Yu-Hao Ho, Keelung, TW;
Yu-Lung Chin, Tainan, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well. The gate structure is disposed over the substrate and partially covers the first doped region and the well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile