The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Aug. 27, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chen Ou, Hsinchu, TW;

Chun-Wei Chang, Hsinchu, TW;

Chih-Wei Wu, Hsinchu, TW;

Sheng-Chih Wang, Hsinchu, TW;

Hsin-Mei Tsai, Hsinchu, TW;

Chia-Chen Tsai, Hsinchu, TW;

Chuan-Cheng Chang, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 33/08 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01);
Abstract

A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.


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