The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Aug. 16, 2016
Winbond Electronics Corp., Taichung, TW;
Masaru Yano, Tokyo, JP;
Pin-Yao Wang, Hsinchu, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A manufacturing method of a semiconductor memory device is provided. The semiconductor memory device can suppress current leakage generated during a programming action so that the programming action can be executed with high reliability. A flash memory of this invention has a memory array in which NAND type strings are formed. Gates of memory cells in row direction of strings are commonly connected to a word line. Gates of bit line select transistors are commonly connected to a select gate line (SGD). Gates of source line select transistors are commonly connected to a select gate line (SGS). An interval (S) of the select gate line (SGS) and a gate of a word line (WL) adjacent to the select gate line (SGS) is larger than an interval (S) of the select gate line (SGD) and a gate of a word line (WL) adjacent to the select gate line (SGD).