The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Apr. 25, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Harry-Hak-Lay Chuang, Singapore, CN;
Chung-Hau Fei, Hsin-Chu, TW;
Bao-Ru Young, Zhubei, TW;
Ming Zhu, Singapore, CN;
Sin-Hua Wu, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/0688 (2013.01); H01L 29/41758 (2013.01); H01L 29/66553 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/7843 (2013.01); H01L 29/7847 (2013.01); H01L 29/7848 (2013.01); H01L 21/26586 (2013.01); H01L 21/26593 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a gate stack over a substrate, forming an amorphized region in the substrate adjacent to an edge of the gate stack, forming a stress film over the substrate, performing a process to form a dislocation with a pinchoff point in the substrate, removing at least a portion of the dislocation to form a recess cavity with a tip in the substrate, and forming a source/drain feature in the recess cavity.