The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Oct. 27, 2014
Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;
Igor Peidous, Lake St. Louis, MO (US);
Illaria Katia Marianna Pellicano, Galliate, IT;
SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;
Abstract
A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided. The method comprises forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single crystal semiconductor handle wafer. The method additionally comprises forming a semiconductor oxide layer on the multilayer of passivated semiconductor layers. The multilayer of passivated semiconductor layers comprise materials suitable for use as charge trapping layers between a high resistivity substrate and a buried oxide layer in a semiconductor on insulator structure.