The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
May. 31, 2016
Applicant:
Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;
Inventors:
Naohide Takamoto, Ibaraki, JP;
Ryuichi Kimura, Ibaraki, JP;
Assignee:
NITTO DENKO CORPORATION, Ibaraki-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 21/561 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68336 (2013.01); H01L 2221/68377 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/54486 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/92 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/0665 (2013.01);
Abstract
It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.