The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Mar. 15, 2016
United Microelectronics Corporation, Hsinchu, TW;
Tsung-Hsun Tsai, Budai Township, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first recess; after performing the dry etch, performing a SPM cleaning process on the substrate by using a nozzle spraying SPM solution with an angle greater than zero and less than 45 degrees relative to the substrate; after performing the SPM cleaning process, performing a wet etch to form a second recess; after performing the wet etch, performing a pre-epi cleaning process; and growing an epitaxial structure in the second recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile