The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
May. 27, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Hernan A. Castro, Shingle Springs, CA (US);
Everardo Torres Flores, Folsom, CA (US);
Stephen H. S. Tang, Boise, ID (US);
Assignee:
MICRON TECHNOLOGY, INC., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 8/08 (2006.01); H01L 21/768 (2006.01); G11C 5/02 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 8/08 (2013.01); H01L 21/76838 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/085 (2013.01); H01L 45/14 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 27/0207 (2013.01);
Abstract
Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.