The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9766546 B1

Date of Patent:

Sep. 19, 2017

Filed:

Jul. 25, 2014

Method of producing a resist structure with undercut sidewall

Applicant:

Ams Ag, Unterpremstaetten, AT;

Inventors:

Gerhard Eilmsteiner, Leoben, AT;

Raimund Hoffmann, Soeding, AT;

Assignee:

AMS AG, Unterpremstaetten, AT;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Kathleen Duda

Int. Cl.

CPC ...

G03F 7/20 (2006.01); G03F 1/54 (2012.01); G03F 7/32 (2006.01); G03F 7/16 (2006.01); G03F 1/50 (2012.01);

U.S. Cl.

CPC ...

G03F 7/2022 (2013.01); G03F 1/50 (2013.01); G03F 1/54 (2013.01); G03F 7/168 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01);

Abstract

The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

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