The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Dec. 22, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jong Keun Oh, Seoul, KR;
Hyungho Ko, Hwaseong-si, KR;
Inkyun Shin, Yongin-si, KR;
Jaehyuck Choi, Seoul, KR;
JunYoul Choi, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/76 (2012.01); G03F 1/48 (2012.01); G03F 1/68 (2012.01); G03F 1/80 (2012.01); G03F 1/38 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/76 (2013.01); G03F 1/38 (2013.01); G03F 1/48 (2013.01); G03F 1/68 (2013.01); G03F 1/80 (2013.01); G03F 1/54 (2013.01);
Abstract
A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.