The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jan. 21, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00269 (2013.01); B81B 3/0021 (2013.01); B81B 2207/09 (2013.01); B81C 2203/0118 (2013.01);
Abstract
Micro-electromechanical (MEMS) devices and methods of forming are provided. An outgas layer is deposited on a surface of a cap wafer. The cap wafer is bonded to a substrate in a manner that forms a first sealed cavity including a first movable element and a second sealed cavity including a second movable element. The out gas layer is annealed to release gas from the out gas layer into the second sealed cavity and increase a pressure of the second sealed cavity so that the second sealed cavity has a higher pressure than the first sealed cavity after the annealing.