IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9761732 B1

PDFFull Text
Date of Patent:
Sep. 12, 2017

Filed:

Feb. 25, 2015

Tunnel thin film transistor with hetero-junction structure

Applicant:

Snaptrack, Inc., San Diego, CA (US);

Inventors:

Kenji Nomura, San Jose, CA (US);

John Hyunchul Hong, San Clemente, CA (US);

Assignee:

SnapTrack Inc., San Diego, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP-QUAL

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Ratisha Mehta

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); G09G 3/20 (2006.01); H01L 29/739 (2006.01); G09G 3/34 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G09G 3/20 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 29/0843 (2013.01); H01L 29/0895 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66969 (2013.01); H01L 29/7391 (2013.01); H01L 29/7848 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01); G09G 3/3466 (2013.01); G09G 2300/08 (2013.01);
Abstract

This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero-junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero-junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.

Find Patent Forward Citations

Loading…