The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jun. 29, 2016
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Jhen-Cyuan Li, New Taipei, TW;
Shui-Yen Lu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/28017 (2013.01); H01L 21/31116 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/165 (2013.01);
Abstract
A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.