The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Aug. 27, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Geng-Shuoh Chang, Taipei, TW;
Yung-Tsun Liu, Taipei, TW;
Chun-Sheng Wu, Hsinchu, TW;
Chun-Li Lin, Hsinchu, TW;
Yi-Fang Li, Hemei Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/64 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 23/485 (2013.01); H01L 23/5223 (2013.01); H01L 23/642 (2013.01); H01L 27/10808 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device also includes a contact plug in the dielectric layer, and a recess extending from a surface of the dielectric layer towards the contact plug. The semiconductor device further includes a capacitor element in the recess and electrically connected to the contact plug.