The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Feb. 25, 2011
Freddy Roozeboom, Waalre, NL;
Adriaan Marinus Lankhorst, Oirschot, NL;
Paulus Willibrordus George Poodt, Nijmegen, NL;
Norbertus Benedictus Koster, Delft, NL;
Gerardus Johan Jozef Winands, Eindhoven, NL;
Adrianus Johannes Petrus Maria Vermeer, Geldrop, NL;
Freddy Roozeboom, Waalre, NL;
Adriaan Marinus Lankhorst, Oirschot, NL;
Paulus Willibrordus George Poodt, Nijmegen, NL;
Norbertus Benedictus Koster, Delft, NL;
Gerardus Johan Jozef Winands, Eindhoven, NL;
Adrianus Johannes Petrus Maria Vermeer, Geldrop, NL;
Abstract
The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.