The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Nov. 24, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Yong Shim, West Lafayette, IN (US);

Jaydeep P. Kulkarni, Portland, OR (US);

Pascal A. Meinerzhagen, Hillsboro, OR (US);

Muhammad M. Khellah, Tigard, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H03K 17/081 (2006.01); H03K 17/14 (2006.01); H03K 3/037 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H03K 3/0377 (2013.01); H03K 17/145 (2013.01);
Abstract

Described is an apparatus which comprises: a power gate transistor coupled to an ungated power supply node and a gated power supply node, the power gate transistor having a gate terminal; a resistive device; a first transistor coupled in series with the resistive device together forming a pair, the first transistor also coupled to the gate terminal of the power gate transistor; a capacitive device coupled in parallel to the series coupled pair of the first transistor and resistive device; and a second transistor coupled to the gate terminal of the power gate transistor and the ungated power supply node.


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