The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 12, 2014
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 27/11578 (2017.01); H01L 27/11582 (2017.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66765 (2013.01); B82Y 10/00 (2013.01); H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01); H01L 29/0673 (2013.01); H01L 29/66439 (2013.01); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/7843 (2013.01); H01L 29/7847 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01); H01L 29/792 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/092 (2013.01); H01L 27/1211 (2013.01);
Abstract
A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion coefficient larger than that of the semiconductor layer; performing thermal treatment; removing the second insulating layer; forming a gate insulating film on the side faces of the narrow portion; forming a gate electrode on the gate insulating film; and forming a source-drain region in the semiconductor layer.