The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Nov. 30, 2015
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Takeshi Aoki, Ehime, JP;

Noboru Fukuhara, Ibaraki, JP;

Hiroyuki Sazawa, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/512 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/28264 (2013.01); H01L 29/4236 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66621 (2013.01); H01L 29/7785 (2013.01); H01L 29/78 (2013.01);
Abstract

To provide a semiconductor wafer having a wafer, a compound semiconductor layer, a first insulating layer and a second insulating layer, wherein in the depth direction, oxygen atoms and nitrogen atoms are continuously distributed, the number of the nitrogen atoms along the depth direction shows its maximum in the first insulating layer, the total number of third atoms and fourth atoms along the depth direction becomes the largest in the compound semiconductor layer, the number of the oxygen atoms at the interface between the compound semiconductor layer and the first insulating layer is smaller than the number of the oxygen atoms at the interface between the first insulating layer and the second insulating layer.


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