The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Apr. 26, 2016
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Chi-Min Yuan, Austin, TX (US);

David R. Tipple, Leander, TX (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 23/528 (2006.01); H01L 21/84 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/823892 (2013.01); H01L 21/84 (2013.01); H01L 23/528 (2013.01); H01L 27/0928 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device includes a bulk substrate of a first conductivity type, a first semiconductor on insulator (SOI) block in the bulk substrate, a first well of the first conductivity type in the first SOI block, a second well of a second conductivity type in the first SOI block, a first guard ring of the first conductivity type in the first SOI block around at least a portion of a periphery of the first SOI block, and a second guard ring of the second conductivity type in the first SOI block around at least a portion of the periphery of the first SOI block. The first conductivity type is different than the second conductivity type.


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