The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Feb. 05, 2016
Jae-jik Baek, Seongnam-si, KR;
Kee-sang Kwon, Hwaseong-si, KR;
Sang-jine Park, Yongin-si, KR;
Bo-un Yoon, Seoul, KR;
Jae-Jik Baek, Seongnam-si, KR;
Kee-Sang Kwon, Hwaseong-si, KR;
Sang-Jine Park, Yongin-si, KR;
Bo-Un Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
The semiconductor device may include an insulating interlayer on the substrate, the substrate including a contact region at an upper portion thereof, a main contact plug penetrating through the insulating interlayer and contacting the contact region, the main contact plug having a pillar shape and including a first barrier pattern and a first metal pattern, and an extension pattern surrounding on an upper sidewall of the main contact plug, the extension pattern including a barrier material. In the semiconductor device, an alignment margin between the contact structure and an upper wiring thereon may increase. Also, a short failure between the contact structure and the gate electrode may be reduced.