The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 25, 2013
Infineon Technologies Ag, Neubiberg, DE;
Walter Rieger, Arnoldstein, AT;
Franz Hirler, Isen, DE;
Martin Poelzl, Ossiach, AT;
Manfred Kotek, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor substrate, a doped zone, a polysilicon layer and an elongate plug structure. The doped zone is within the semiconductor substrate. The polysilicon layer is disposed in a trench electrically isolated from the semiconductor substrate by an insulating layer. The elongate plug structure extends in a lateral direction in or above the semiconductor substrate. The elongate plug structure provides electrical connection between the doped zone and the polysilicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile