The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Feb. 08, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/32134 (2013.01); H01L 21/6708 (2013.01);
Abstract
A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal. Using chemical including acidic chemical for hard mask layer removal is cheaper and the resource can be easily generated by equipment. Thus the chemical for hard mask layer removal can be drained directly and need not be recycled.