The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 12, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Shinichi Nakao, Yokkaichi Mie, JP;
Shunsuke Ochiai, Yokkaichi Mie, JP;
Yusuke Oshiki, Kuwana Mie, JP;
Kei Watanabe, Yokkaichi Mie, JP;
Mitsuhiro Omura, Kuwana Mie, JP;
Kosuke Horibe, Yokkaichi Mie, JP;
Atsuko Sakata, Yokkaichi Mie, JP;
Junichi Wada, Yokkaichi Mie, JP;
Soichi Yamazaki, Yokkaichi Mie, JP;
Masayuki Kitamura, Yokkaichi Mie, JP;
Yuya Matsubara, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.