The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
May. 14, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Guan-Ru Lee, Kaohsiung, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A memory device comprises a patterned multi-layers stacking structure, a semiconductor capping layer, a memory layer and a channel layer. The patterned multi-layers stacking structure is formed on a substrate and has at least one trench used to define a plurality of ridge-shaped stacks comprising at least one conductive strip in the patterned multi-layers stacking structure. The semiconductor capping layer covers on the ridge-shaped stacks. The memory layer covers on sidewalls of the trench. The channel layer covers on the memory layer, the semiconductor capping layer and a bottom of the trench, wherein the channel layer is directly in contact with the semiconductor capping layer.