The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Jul. 18, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Katsumasa Kawasaki, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 7/24 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32155 (2013.01);
Abstract

Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.


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