The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Aug. 26, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yijie Zhao, Boise, ID (US);

Akira Goda, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/12 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3427 (2013.01); G11C 16/3454 (2013.01);
Abstract

A method of programming a memory includes boosting a channel voltage while a first portion of a plurality of increasing programming pulses is applied to a selected access line, and when a criteria is met, reducing the channel voltage to a reduced voltage level and subsequently boosting the channel voltage, starting from the reduced voltage level, while a second portion of the plurality of increasing programming pulses is applied to the selected access line. Differences between the channel voltage boosted while the first portion of the plurality of increasing programming pulses is applied and voltages of the first portion of the plurality of increasing programming pulses are substantially the same as differences between the channel voltage boosted while the second portion of the plurality of increasing programming pulses is applied and voltages of the second portion of the plurality of increasing programming pulses.


Find Patent Forward Citations

Zhao, Yijie. (2017). Programming methods and memories (U.S. Patent No. 9754671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9754671

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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