The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Feb. 26, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi Aichi-ken, JP;
Yohei Iwahashi, Okazaki, JP;
Hidemi Senda, Toyota, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A manufacturing method of a semiconductor device is provided with an inspecting of a semiconductor substrate by an inspection method, the method including heating the semiconductor substrate, measuring first and second characteristics. The measuring of a first characteristic is performed by bringing a plurality of probes into contact with the heated semiconductor substrate and making a first electric current flow in the semiconductor substrate. The measuring of a second characteristic is performed, after the measuring of the first characteristic, by bringing a plurality of probes into contact with the heated semiconductor substrate and making a second electric current flow in the semiconductor substrate. A number of the plurality of probes used in the measuring of the second characteristic is larger than a number of the plurality of probes used in the measuring of the first characteristic. The second electric current is larger than the first electric current.