The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 05, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungkyunkwan University Foundation for Corporate Collaboration, Suwon-si, KR;
Sang-hun Jeon, Seoul, KR;
Jong-jin Park, Hwaseong-si, KR;
Thanh Tien Nguyen, Suwon-si, KR;
Ji-hyun Bae, Seoul, KR;
Kyung-eun Byun, Uijeongbu-si, KR;
Nae-eung Lee, Suwon-si, KR;
Do-il Kim, Daegu, KR;
Quang Trung Tran, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION, Suwon-si, KR;
Abstract
A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.