The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Apr. 27, 2016
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/56 (2006.01); H03F 3/213 (2006.01); H03F 1/26 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01);
U.S. Cl.
CPC ...
H03F 1/565 (2013.01); H03F 1/26 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 2200/225 (2013.01); H03F 2200/391 (2013.01); H03F 2200/451 (2013.01);
Abstract
An output impedance-matching network for an RF power amplifier die includes a harmonic-prevention circuit that functions like a short circuit at a fundamental frequency of the amplifier and an open circuit at a second harmonic frequency of the amplifier. In certain implementations, the harmonic-prevention circuit has one or more parallel, reactive (LC) legs that resonate at the fundamental frequency and a parallel, reactive (capacitive) leg that causes the harmonic-prevention circuit to resonate at the second harmonic frequency. The harmonic-prevention circuit improves power transfer and efficiency of the RF power amplifier.