The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Oct. 09, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Scott D. Schellhammer, Meridian, ID (US);

Scott E. Sills, Boise, ID (US);

Lifang Xu, Boise, ID (US);

Thomas Gehrke, Boise, ID (US);

Zaiyuan Ren, Boise, ID (US);

Anton J. De Villiers, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.


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