The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Oct. 19, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Ming Huang, New Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Chih-Heng Shen, Zhubei, TW;
Po-Tao Chu, New Taipei, TW;
Abstract
A semiconductor device includes a gate structure, a source region and a drain region. The source region and the drain region are on opposite sides of the gate structure. The source region includes a first region of a first conductivity type and a second region of a second conductivity type. The second conductivity type is opposite to the first conductivity type. The first region is between the second region and the gate structure. The second region includes at least one projection protruding into the first region and toward the gate structure.