The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 01, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Sheng-De Liu, Zhongli, TW;
Ming-Chyi Liu, Hsin-Chu, TW;
Chung-Yen Chou, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/08 (2006.01); H01L 29/205 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 29/0847 (2013.01); H01L 29/205 (2013.01); H01L 29/42376 (2013.01); H01L 29/452 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66568 (2013.01); H01L 29/66583 (2013.01);
Abstract
Embodiments of the present disclosure include a MISFET device. An embodiment includes a source/drain over a substrate, a first etch stop layer on the source/drain, and a gate dielectric layer on the first etch stop layer and along the substrate. The embodiment also includes a gate electrode on the gate dielectric layer, and a second etch stop layer on the gate electrode.