The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Nov. 01, 2016
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Da-Ming Zhuang, Beijing, CN;
Ming Zhao, Beijing, CN;
Ming-Jie Cao, Beijing, CN;
Li Guo, Beijing, CN;
Ze-Dong Gao, Beijing, CN;
Yao-Wei Wei, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01);
Abstract
A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.