The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jun. 24, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ming-Song Sheu, Hsinchu, TW;
Jian-Hsing Lee, Hsinchu, TW;
Yu-Chang Jong, Hsinchu, TW;
Chun-Chien Tsai, Yongkang, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 27/0251 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/1083 (2013.01); H01L 29/7817 (2013.01); H01L 29/7835 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/1045 (2013.01);
Abstract
An integrated circuit includes at least one transistor over a substrate, and a first guard ring disposed around the at least one transistor. The integrated circuit further includes a second guard ring disposed around the first guard ring. The integrated circuit further includes a first doped region disposed adjacent to the first guard ring, the first doped region having a first dopant type. The integrated circuit further includes a second doped region disposed adjacent to the second guard ring, the second doped region having a second dopant type.