The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Dec. 26, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shin-Chi Chen, Penghu County, TW;
Chih-Yueh Li, Taipei, TW;
Pei-Ching Yeh, Changhua County, TW;
Chih-Jen Lin, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/28123 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor pattern structure includes a substrate, an input/output (I/O) region defined on the substrate, a core region defined on the substrate, a dummy region defined on the substrate, and a gate electrode formed on the substrate. The dummy region is formed between the I/O region and the core region. The gate electrode crosses the I/O region and covers a portion of the dummy region.