The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Aug. 14, 2015
Kee Sang Kwon, Seoul, KR;
Boun Yoon, Seoul, KR;
Sangjine Park, Yongin-si, KR;
Myunggeun Song, Yongin-si, KR;
Ki-hyung Ko, Yongin-si, KR;
Jiwon Yun, Hwaseong-si, KR;
Kee Sang Kwon, Seoul, KR;
Boun Yoon, Seoul, KR;
Sangjine Park, Yongin-si, KR;
Myunggeun Song, Yongin-si, KR;
Ki-Hyung Ko, Yongin-si, KR;
Jiwon Yun, Hwaseong-si, KR;
Abstract
Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work-function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.