The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jul. 30, 2015
Applicant:

Veeco Instruments, Inc., Plainview, NY (US);

Inventors:

Eric Armour, Pennington, NJ (US);

George Papasouliotis, Warren, NJ (US);

Daewon Kwon, Whippany, NJ (US);

Assignee:

Veeco Intruments Inc., Plainview, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/324 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); C23C 16/48 (2006.01); C23C 16/52 (2006.01); C23C 16/458 (2006.01); C23C 16/04 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/3245 (2013.01); C23C 16/047 (2013.01); C23C 16/4584 (2013.01); C23C 16/482 (2013.01); C23C 16/52 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66431 (2013.01); H01L 29/7787 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01);
Abstract

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (UV) light source, which is controlled to produce a raster of a UV light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. In various embodiments, the tunable UV light source is configured external to a Metal Organic Chemical Vapor Deposition (MOCVD) chamber and controlled such that the UV light beam is directed though a window defined in a wall of the MOCVD chamber.


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