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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748108 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Mar. 11, 2016

Method of forming graphene nanopattern by using mask formed from block copolymer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Seongjun Jeong, Hwaseong-si, KR;

Seongjun Park, Seoul, KR;

Yunseong Lee, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/467 (2006.01); H01L 51/00 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/3065 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/467 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/1606 (2013.01); H01L 29/66037 (2013.01); H01L 29/66045 (2013.01); H01L 29/778 (2013.01); H01L 51/0045 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 29/775 (2013.01); Y10S 977/888 (2013.01);
Abstract

Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

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