The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jul. 22, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/285 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/308 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45531 (2013.01); C23C 16/45551 (2013.01); H01L 21/76841 (2013.01); H01L 21/76856 (2013.01);
Abstract
A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.