The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Dec. 31, 2013
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Koichiro Tanaka, Atsugi, JP;
Hidekazu Miyairi, Atsugi, JP;
Aiko Shiga, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Atsuo Isobe, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.