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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748079 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Feb. 20, 2015

Cylindrical sputtering target material

Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Michiaki Ohto, Osaka, JP;

Satoshi Kumagai, Osaka, JP;

Akira Sakurai, Osaka, JP;

Assignee:

MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;

Attorney:

Leason Ellis LLP

Primary Examiner:

Michael Band

Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C22C 9/00 (2006.01); C22C 30/02 (2006.01); C22C 9/01 (2006.01); C22C 9/02 (2006.01); C22C 9/04 (2006.01); C22C 9/05 (2006.01); C22C 9/06 (2006.01); C22F 1/00 (2006.01); C22C 1/08 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); C22F 1/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C22C 9/00 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01J 37/3423 (2013.01); H01L 21/28 (2013.01); H01L 21/285 (2013.01); C22C 9/01 (2013.01); C22C 9/02 (2013.01); C22C 9/04 (2013.01); C22C 9/05 (2013.01); C22C 9/06 (2013.01); C22F 1/00 (2013.01); C22F 1/08 (2013.01);
Abstract

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ/Lwhich are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ/L, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

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